BSP129 sipmos ? small-signal-transistor features ? n-channel ? depletion mode ? d v /d t rated maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 0.35 a t a =70 c 0.28 pulsed drain current i d,pulse t a =25 c 1.4 reverse diode d v /d t d v /d t i d =0.36 a, v ds =192 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1 power dissipation p tot t a =25 c 1.8 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value v ds 240 v r ds(on),max 6 ? i dss,min 0.05 a product summary type package ordering code tape and reel information marking BSP129 sot-223 q67000-s073 e6327: 1000 pcs/reel BSP129 sot-223 rev. 1.0 page 1 2003-03-28
BSP129 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point (pin 4) r thjs - - 25 k/w smd version, device on pcb r thja minimal footprint - - 115 6 cm 2 cooling area 1) --70 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =-3 v, i d =250 a 240 - - v gate threshold voltage v gs(th) v ds =3 v, i d =108 a -2.1 -1.4 -1 drain-source leakage current i d (off) v ds =240 v, v gs =-3 v, t j =25 c - - 0.1 a v ds =240 v, v gs =-3 v, t j =125 c --10 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 10 na saturated drain current i dss v gs =0 v, v ds =10 v 50 - - ma drain-source on-state resistance r ds(on) v gs =0 v, i d =25 ma - 6.5 20 ? v gs =10 v, i d =0.35 a - 4.2 6.0 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.28 a 0.18 0.36 - s values 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (single layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 1.0 page 2 2003-03-28
BSP129 parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 82 108 pf output capacitance c oss -1216 reverse transfer capacitance c rss -610 turn-on delay time t d(on) - 4.4 6.6 ns rise time t r - 4.1 6.2 turn-off delay time t d(off) -2233 fall time t f -3553 gate charge characteristics gate to source charge q gs - 0.24 0.36 nc gate to drain charge q gd - 1.7 2.6 gate charge total q g - 3.8 5.7 gate plateau voltage v plateau - 0.37 - v reverse diode diode continous forward current i s - - 0.35 a diode pulse current i s,pulse - - 1.4 diode forward voltage v sd v gs =-3 v, i f =0.35 a, t j =25 c - 0.79 1.2 v reverse recovery time t rr -5380ns reverse recovery charge q rr -6597nc v r =120 v, i f =0.2 a, d i f /d t =100 a/s t a =25 c values v gs =-3 v, v ds =25 v, f =1 mhz v dd =120 v, v gs =-2...5 v, i d =0.2 a, r g =7.6 ? v dd =192 v, i d =0.2 a, v gs =-3 to 5 v rev. 1.0 page 3 2003-03-28
BSP129 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs 10 v 3 safe operation area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 0.001 0.01 0.1 1 10 1 10 100 1000 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 10 100 0 0 0 0 1 10 100 t p [s] z thja [k/w] 0 0.5 1 1.5 2 0 40 80 120 160 t a [c] p tot [w] 0 0.1 0.2 0.3 0.4 0 40 80 120 160 t a [c] i d [a] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 rev. 1.0 page 4 2003-03-28
BSP129 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c -0.2 v -0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 5 10 15 20 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 i d [a] r ds(on) [ ? ] 0 0.2 0.4 0.6 0.8 1 -2 -1 0 1 2 3 v gs [v] i d [a] 0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i d [a] g fs [s] -0.2 v -0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0246810 v ds [v] i d [a] rev. 1.0 page 5 2003-03-28
BSP129 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.025 a; v gs =0 v v gs(th) =f( t j ); v ds =3 v; i d =108 a parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =-3 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 10 20 30 40 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] typ 98 % 2 % -3 -2.5 -2 -1.5 -1 -0.5 0 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 1 10 100 1000 0 5 10 15 20 25 30 v ds [v] c [pf] 25 c 150 c 25 c, 98 % 150 c, 98 % 0.01 0.1 1 10 0 0.5 1 1.5 v sd [v] i f [a] rev. 1.0 page 6 2003-03-28
BSP129 14 typ. gate charge 15 drain-source breakdown voltage v gs =f( q gate ); i d =0.2 a pulsed v br(dss) =f( t j ); i d =250 a parameter: v dd 200 220 240 260 280 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0.2 vds(max) 0.5 vds(max) 0.8 vds(max) -4 -3 -2 -1 0 1 2 3 4 5 6 01234 q gate [nc] v gs [v] rev. 1.0 page 7 2003-03-28
BSP129 packa g e outline: footprint: packaging: rev. 1.0 page 8 2003-03-28
BSP129 published by infineon technologies ag bereich kommunikation st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 9 2003-03-28
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